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دیتاشیت STD8N80K5
مشخصات دیتاشیت
| نام دیتاشیت | STD8N80K5 Datasheet | 
|---|---|
| حجم فایل | 460.208 کیلوبایت | 
| نوع فایل | |
| تعداد صفحات | 19 | 
														دانلود دیتاشیت STD8N80K5 Datasheet | 
													STD8N80K5 Datasheet Datasheet | 
|---|
مشخصات
- RoHS: true
 - Type: N Channel
 - Category: Triode/MOS Tube/Transistor/MOSFETs
 - Datasheet: STMicroelectronics STD8N80K5
 - Operating Temperature: -55°C~+150°C@(Tj)
 - Power Dissipation (Pd): 110W
 - Total Gate Charge (Qg@Vgs): 16.5nC@10V
 - Drain Source Voltage (Vdss): 800V
 - Input Capacitance (Ciss@Vds): 450pF@100V
 - Continuous Drain Current (Id): 6A
 - Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
 - Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@10V,3A
 - Package: TO-252
 - Manufacturer: STMicroelectronics
 - Series: SuperMESH5™
 - Packaging: Cut Tape (CT)
 - Part Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 800V
 - Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
 - Vgs(th) (Max) @ Id: 5V @ 100µA
 - Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
 - Vgs (Max): ±30V
 - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
 - FET Feature: -
 - Power Dissipation (Max): 110W (Tc)
 - Mounting Type: Surface Mount
 - Supplier Device Package: DPAK
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 - Base Part Number: STD8N
 - detail: N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK