دیتاشیت STD8N80K5
مشخصات دیتاشیت
| نام دیتاشیت | STD8N80K5 Datasheet |
|---|---|
| حجم فایل | 460.208 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 19 |
دانلود دیتاشیت STD8N80K5 Datasheet |
STD8N80K5 Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD8N80K5
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 110W
- Total Gate Charge (Qg@Vgs): 16.5nC@10V
- Drain Source Voltage (Vdss): 800V
- Input Capacitance (Ciss@Vds): 450pF@100V
- Continuous Drain Current (Id): 6A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@10V,3A
- Package: TO-252
- Manufacturer: STMicroelectronics
- Series: SuperMESH5™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: STD8N
- detail: N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
